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ON THE VARIABLE HOPPING RANGE CONDUCTIVITY IN ZnO DOPED SYSTEMS


TITUS SANDU 1, RODICA PLUGARU 1, NECULAI PLUGARU 2
1. National Institute for R & D in Microtechnologies (IMT), Erou Iancu Nicolae Str. 126A, Bucharest 077190, P.O. BOX 38-160, Romania
2. National Institute of Materials Physics, Atomistilor Str. 105bis, Magurele-Bucharest 077125, P.O. Box MG-07, Ilfov, Romania

Issue:

PLUMEE, Number 1, Volume I

Section:

Issue No. 1 - Volume 3(2013)
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Abstract:

At low temperatures materials like semiconductors with impurities and/or defects show a Variable Range Hopping (VRH) conduction mechanism. This mechanism is important in wide-bandgap semiconductors which are technologically relevant in transparent electronics. In this paper we analyze the VRH conduction mechanism in Al doped ZnO. Our study is based on ab-initio electronic structure calculations. A careful analysis of the effect of carrier concentration illustrates that for a doping below 2 % the VRH mechanism is dominant in Al doped ZnO. Our results are in agreement with experimental data on growth and characterization of Al doped ZnO films.

Keywords:

Variable Range Hopping, transparent semiconductors, Coherent Potential Approximation, Density Functional Theory.

Code [ID]:

PLUMEE201301V01S01A0062 [0004018]

Full paper:

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