Issue:

PLUMEE, Number 1, Volume VIII

Section:

Issue No.1 - Volume 8 (2018)

Abstract:

The results of the investigation of the galvanomagnetic properties of thin layers of solid solutions of Cd1-XZnXTe are given. The activation energy of acceptors equals to 0.22 eV for a layer with x = 0.2 and to 0.38 eV for a layer with x = 0.4 were calculated. In the n-CdTe-p-Cd0.8Zn0.2Te heterostructures the direct currents exceed the inverse currents by a factor of ~ 105. The main mechanism of current flow through the barrier is over-barrier diffusion.

Keywords:

thin layers Cd1-XZnXTe, activation energy, heterostructures, mechanism of current flow.

Code [ID]:

PLUMEE201801V08S01A0003 [0004823]

Note:

Full paper:

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