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ABSORPTION SPECTERS OF NARROW GAP SEMIMAGNETIC SEMICONDUCTORS WITH COMPARED WITH NONMAGNETIC SEMICONDUCTORS


POSTOLACHI IGOR
TIRASPOL STATE UNIVERSITY, 5 GH. IABLOCIKIN ST., 2069, CHIƞINĂU, MOLDOVA

Issue:

MOCM, Number 13, Volume III

Section:

Issue No. 13 - Volume III (2007)

Abstract:

In present work were studied the main laws of components repartition on the epitaxial coats geometry of Hg1-xMnxTe, Hg1-xCdxTe and Hg1-x-yCdxMnyTe using two methods: the micro-X-ray-structural method and the optic methods. A curve of standardization was constructed, having from the experiment the energy band width to determine the concentration of cadmium and manganese. Analyzing the absorption specters structure it was determined that in the absence of external magnetic field the energy specters of the charge carriers of the semimagnetic materials Hg1-xMnxTe, Hg1-x-yCdxMnyTe and of nonmagnetic materials Hg1-xCdxTe with the same energy gap width have the same form. The theoretical calculations of absorption specters were realized within the Kane model with its non-parabolic perturbations specific for indium antimonid as the narrow-gap semiconductor.

Keywords:

semimagnetic materials, absorption specters.

Code [ID]:

MOCM200713V03S01A0035 [0001819]


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