In this article is studied the influence of the concentration of Sn atoms on the electrical conductivity of the crystals ?-GaSe. Sn atoms with concentration less than 0.5% at are uniformly distributed within the volume of the gallium selenide monocristal, and do not change the way of packing of the layers which are characteristic for the polymorphic form ?-GaSe. Doping the gallium selenide monocristal leads to the growth of its electric conductibility by 1-2 orders at room temperature. Variation of the electrical conductivity when the concentration of Sn atoms is changed in the GaSe crystal is determined by the decrease of the number of vacations in the metal substructure (VGa) inside the compound during the process of growing of the monocrystal and decreasing of the density of the localized states.
