Titanium oxide films are of great interest both for the photocatalytic activity of this semiconductor and its remarkable electrical and optical properties. Plasma Enhanced Chemical Vapour Deposition (PECVD) processes are widely used to deposit such materials into thin films. However, because traditional PECVD processes require expansive vacuum systems and pumps, there has been a growing interest in the last decades to replace them by atmospheric pressure systems. The purpose of this work is the adaptation of our atmospheric pressure - PECVD process (axial injection torch) for the deposition of titanium oxide thin films, using titanium tetraisopropoxide as Ti precursor.
