Issue:

PLUMEE, Number 1, Volume VII

Section:

Issue No.1 - Volume 7 (2017)

Abstract:

Thin CuInSe2 layers were obtained by “flash” evaporation method, possessed a p-type conductivity and a hole concentration of more than ~ 1019 cm-3. The energy of the intrinsic defects associated with the interstitial selenium atoms is 0.13 eV, and the low values of the charge carriers mobility indicate the presence of a compensation effect.

Keywords:

solar cells, thin layers CuInSe2, kinetic properties.

Code [ID]:

PLUMEE201701V07S01A0001 [0004717]

Note:

DOI:

Full paper:

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