Abstract
We present the specific characteristics (amplitude, hysteresis cycle) of the temperature activated metal- insulator transition (MIT) of vanadium dioxide thin films. We performed this study at different frequency domains (from DC to terahertz) in order to better understanding the properties of this transition, relevant for developing novel devices and applications for low- and high-frequency electronics.
Cuvinte cheie
metal-insulator transition (MIT)
VO2 thin films
low- and high-frequnecy charcaterisation