CuInSe2 THIN LAYERS FABRICATION AND THEIR KINETIC PROPERTIES
NICORICI VALENTINA(*1), CHETRUS PETRU(1)
1. State University of Moldova, Mateevici str. 60, Chisinau, MD-2009 Republic of Moldova *Corresponding author, courriel dmitrogloliliana@yahoo.com
Abstract
Thin CuInSe2 layers were obtained by “flash” evaporation method, possessed a p-type conductivity and a hole concentration of more than ~ 1019 cm-3. The energy of the intrinsic defects associated with the interstitial selenium atoms is 0.13 eV, and the low values of the charge carriers mobility indicate the presence of a compensation effect.