ELECTRICAL PROPERTIES OF HETEROSTRUCTURES BASED ON CdTe –ZnTe

  • NICORICI VALENTINA
    Moldova State University, Mateevici Street 60, Chisinau, 2009, Republic of Moldova
  • CHETRUS PETRU
    Moldova State University, Mateevici Street 60, Chisinau, 2009, Republic of Moldova

Abstract

The results of the investigation of the galvanomagnetic properties of thin layers of solid solutions of Cd1-XZnXTe are given. The activation energy of acceptors equals to 0.22 eV for a layer with x = 0.2 and to 0.38 eV for a layer with x = 0.4 were calculated. In the n-CdTe-p-Cd0.8Zn0.2Te heterostructures the direct currents exceed the inverse currents by a factor of ~ 105. The main mechanism of current flow through the barrier is over-barrier diffusion.

Cuvinte cheie

thin layers Cd1-XZnXTe activation energy heterostructures mechanism of current flow