Quick search
Go!

SPREADING MECHANISMS OF CHARGE CARRIERS IN GALLIUM ANTIMONID DOPED WITH IRON


GHEORGHITZA EUGEN, GUTULEAC LEONID, MELINTE VICTORIA, ZLOTEA OLGA, POSTOLACHI IGOR
TIRASPOL STATE UNIVERSITY, 5 GH. IABLOCIKIN ST., 2069, CHIƞINĂU, MOLDOVA

Issue:

MOCM, Number 13, Volume II

Section:

Issue No. 13 - Volume II (2007)

Abstract:

Obtaining, homogenizing, and purifying technologic conditions of the gallium antimonid doped with iron and simultaneously doped with iron and tellurium. According to the research of galvanometric features of non-doped gallium antimonid and gallium antimonid doped with iron in 3 atomic % concentration for the temperature pitch of (4,2Ă·300K) the mechanisms of charge carriers spreading were analyzed. It is demonstrated that for experimental data explanation obtained for the U=U(T) function it is necessary to involve an additional mechanism of charge carriers spreading specific for the inclusions formed in gallium antimonid – clusters. Using the physic conceptions of this mechanism the basic characteristics of spreading the charge carriers determined by clusters were calculated.

Keywords:

GaSb, doped with iron, mechanisms of charge carriers, clusters.

Code [ID]:

MOCM200713V02S01A0054 [0001769]

DOI:


Copyright (c) 1995-2007 University of Bacău