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STUDY OF THE METAL-INSULATOR TRANSITION IN VANADIUM DIOXIDE FROM DC TO THZ FREQUENCIES


LEROY JONATHAN 1, MADRANGEAS VALÉRIE 1, CRUNTEANU AURELIAN 1, HUMBERT GEORGES 1, PASSERIEUX DAMIEN 1, ORLIANGES JEAN-CHRISTOPHE 2, CHAMPEAUX CORINNE 2, BLONDY PIERRE 1
1. XLIM UMR 7252, CNRS/ Université de Limoges, 123 avenue Albert Thomas, 87060 Limoges Cedex, France
2. SPCTS UMR 7315, CNRS/ Université de Limoges, 12 rue Atlantis 87068, Limoges Cedex, France

Issue:

PLUMEE, Number 1, Volume I

Section:

Issue No. 1 - Volume 3(2013)
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Abstract:

We present the specific characteristics (amplitude, hysteresis cycle) of the temperature activated metal- insulator transition (MIT) of vanadium dioxide thin films. We performed this study at different frequency domains (from DC to terahertz) in order to better understanding the properties of this transition, relevant for developing novel devices and applications for low- and high-frequency electronics.

Keywords:

metal-insulator transition (MIT), VO2 thin films, low- and high-frequnecy charcaterisation.

Code [ID]:

PLUMEE201301V01S01A0028 [0003984]

DOI:

Full paper:

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