Abstract
Obtaining, homogenizing, and purifying technologic conditions of the gallium antimonid doped with iron and simultaneously doped with iron and tellurium. According to the research of galvanometric features of non-doped gallium antimonid and gallium antimonid doped with iron in 3 atomic % concentration for the temperature pitch of (4,2÷300K) the mechanisms of charge carriers spreading were analyzed. It is demonstrated that for experimental data explanation obtained for the U=U(T) function it is necessary to involve an additional mechanism of charge carriers spreading specific for the inclusions formed in gallium antimonid – clusters. Using the physic conceptions of this mechanism the basic characteristics of spreading the charge carriers determined by clusters were calculated.